BAS40W datasheet(1/2 Pages) SECOS

No. de pieza	BAS40W

Descripción Electrónicos	Surface Mount Schottky Barrier Diodes

PDF	2 Pages

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Fabricante Electrónico	SECOS [SeCoS Halbleitertechnologie GmbH]

Página de inicio	http://www.secosgmbh.com

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Elektronische Bauelemente

BAS40/-04W/-05W/-06W

Surface Mount Schottky Barrier Diodes

22-Sept-2008 Rev.C

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Dim

Min

Max

A

1.800

2.200

B

1.150

1.350

C

0.800

1.000

D

0.300

0.400

G

1.200

1.400

H

0.000

0.100

J

0.100

0.250

K

0.350

0.500

L

0.590

0.720

S

2.000

2.400

V

0.280

0.420

All Dimension in mm

SOT-323

K

J

C

H

L

A

B S

G

V

D

Top View

1

2

3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low Turn-on Voltage

Low Forward Voltage

Very Low Capacitance

Less Than 5.0pF @ 0V

For high speed switching application, circuit protection

MECHANICAL DATA

Case: SOT-323, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagrams Below

Weight: 0.006 grams (approx.)

Mounting Position: Any

BAS40W Marking: 43

BAS40-04W Marking: 44

BAS40-05W Marking: 45

BAS40-06W Marking: 46

1

21

1

2

3

33

3

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Reverse Voltage

VR

40

V

Forward Continuous Current

IF

200

mA

Single Forward Current, t≦10 ms

IFSM

600

mA

Thermal Resistance (Note 1)

Junction−to−Ambient (Note 2)

RθJA

508

311

°C/W

Forward Power Dissipation

@ TA = 25°C

Derate above 25°C

PF

325

1.8

mW

mW / °C

Junction, Storage Temperature

TJ, TSTG

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)

Parameters

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V(BR)R

40

-

V

IR = 10 μA

Reverse Current

IR

-

200

nA

VR = 30V

VF1

-

380

mV

IF = 1mA

Forward Voltage

VF2

-

1000

mV

IF = 40mA

Diode Capacitance

CTOT

-

5.0

pF

VR = 0, f=1MHz

Reverse Recovery Time

tRR

-

5

nS

IRR = 1 mA, IR=IF=10mA, RL=100Ω

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