2SC1815W datasheet(1/2 Pages) SECOS

No. de pieza	2SC1815W

Descripción Electrónicos	NPN Transistor Epitaxial Planar Transistor

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Fabricante Electrónico	SECOS [SeCoS Halbleitertechnologie GmbH]

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Any changing of specification will not be informed individual

2SC1815W

NP

N Transistor

Epitaxial Planar Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

The 2SC1815W is designed for use in

driver stage of AF amplifier and general

purpose amplificaion.

Description

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Parameter

Symbol

Min

Typ.

Max

Uni

Test Conditions

Collector-Base Breakdown Voltage

BVCBO

-

V

IC= 100

VEB=5V

µA

IC= 1mA

IE= 10µA

VCB= 60V

IC=

VCE= V, IC=

VCE=

V, IC= 1mA,f=100MHz

VCB=10 , f=1MHz

BVCEO

50

-

V

BVEBO

-

V

ICBO

-

100

nA

-

VCE(sat)

-

hFE2

*

fT

-

MH

Cob

-

pF

z

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector Saturation Voltage

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

t

60

5

250

100

mV

100mA,IB=10mA

6

150mA

10

V

C

25

-

80

3.5

*Pulse width 380 s, Duty Cycle 2%

≦

µ

*

-

o

IEBO

Emitter-Base Cutoff Current

-

nA

Classification of hFE

Rank

C4Y

C4G

120~240

200~400

Range

C4B

350~700

IC=

VBE(sat)

-

Base Saturation Voltage

1

V

100mA,IB=10mA

*

VCE= V, IC=

hFE1

*

6

2mA

120

-

700

-

MAXIMUM RATINGS

Symbol

Parameter

Value

Collector Current

5

225

55~+150

50

60

150

IC

Tstg

TJ,

Junction and

Total Power Dissipation

VEBO

PD

Emitter-Base Voltage

V

mA

mW

Storage Temperature

-

C

O

VCEO

Collector-Emitter Voltage

V

VCBO

Collector-Base Voltage

V

Units

ABSOLUTE

Ta=25C

o

01-Jun-2002 Rev. A

Page 1 of 2

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

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