2SA1576F datasheet(1/3 Pages) SECOS

No. de pieza	2SA1576F

Descripción Electrónicos	PNP Silicon General Purpose Transistor

PDF	3 Pages

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Fabricante Electrónico	SECOS [SeCoS Halbleitertechnologie GmbH]

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2SA1576F

PNP Silicon

General Purpose Transistor

RoHS Compliant Product

·

Complements the 2SC4081F

COLLECTOR

3

1

BASE

2

EMITTER

Dim

Min

Max

A

1.800

2.200

B

1.150

1.350

C

0.800

1.000

D

0.300

0.400

G

1.200

1.400

H

0.000

0.100

J

0.100

0.250

K

0.350

0.500

L

0.590

0.720

S

2.000

2.400

V

0.280

0.420

All Dimension in mm

SOT-323

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

1

2

3

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2002 Rev. A

Page 1 of 3

Absolute Maximum Ratings at Ta = 25

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

-60

V

Collector to Emitter Voltage

VCEO

-50

V

Emitter to Base Voltage

VEBO

-6

V

Collector Current

IC

-150

mA

Total Power Dissipation

PD

225

mW

Characteristics at Ta = 25

Parameter

Symbol

Min

Typ.

Max

Unit

Test Conditions

Collector-Base Breakdown Voltage

BVCBO

-60

-

V

IC=-50uA

Collector-Emitter Breakdown Voltage

BVCEO

-50

-

V

IC=-1mA

Emitter-Base Breakdown Voltage

BVEBO

-6

-

V

IE=-50uA

Collector-Emitter Breakdown Voltage

ICBO

-

-100

nA

VCB=-60V

Emitter-Base Cutoff Current

IEBO

-

-100

nA

VEB=-6V

Collector Saturation Voltage 1

VCE(sat)

-

-500

mV

IC=-50mA, IB=-5mA

DC Current Gain

hFE

120

-

560

-

VCE=-6V, IC=-1mA

Gain-Bandwidth Product

fT

-

140

-

MHz

VCE=-12V, IE=-2mA, f=100MHz

Output Capacitance

Cob

-

4.0

5.0

pF

VCB=-12V, f=1MHz, IE=0

Range

120 - 270

180 - 390

270 - 560

*Pulse Test: Pulse Width = 380us, Duty Cycle = 2%

Classification of hFE

Rank

Q

R

S

Feature

Marking Code: 5AX

X = hFE Rank Code

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