RJK0393DPA datasheet(1/7 Pages) RENESAS

No. de pieza	RJK0393DPA

Descripción Electrónicos	Silicon N Channel Power MOS FET Power Switching

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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REJ03G1784-0200 Rev.2.00 Apr 03, 2009

Page 1 of 6

RJK0393DPA

Silicon N Channel Power MOS FET

Power Switching

REJ03G1784-0200

Rev.2.00

Apr 03, 2009

Features

• High speed switching

• Capable of 4.5V gate drive

• Low drive current

• High density mounting

• Low on-resistance

RDS(on) = 3.3 mΩ typ. (at VGS = 10 V)

• Pb-free

• Halogen-free

Outline

RENESAS Package code: PWSN0008DA-A

(Package name: WPAK)

G

D

SS S

DD D

4

12 3

56 7 8

1, 2, 3

Source

4

Gate

5, 6, 7, 8 Drain

8

7

6

5

2 1

3

4

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

30

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

40

A

Drain peak current

ID(pulse)

Note1

160

A

Body-drain diode reverse drain current

IDR

40

A

Avalanche current

IAP

Note 2

16

A

Avalanche energy

EAR

Note 2

25.6

mJ

Channel dissipation

Pch

Note3

40

W

Channel to case thermal impedance

θch-C

3.13

°C/W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25

°C, Rg ≥ 50 Ω

3. Tc = 25

°C

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