BAV20WS-V datasheet(2/6 Pages) VISHAY

2 / 6 page

www.vishay.com

Document Number 85726

Rev. 1.4, 31-Jul-06

BAV19WS-V/20WS-V/21WS-V

Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

1) Valid provided that leads are kept at ambient temperature

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Valid provided that leads are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Value

Unit

Continuous reverse voltage

BAV19WS-V

100

BAV20WS-V

150

BAV21WS-V

200

Repetitive peak reverse voltage

BAV19WS-V

VRRM

120

BAV20WS-V

VRRM

200

BAV21WS-V

VRRM

250

Forward continuous current

Tamb = 25 °C

2501)

Rectified current (average) half

wave rectification with resist.

load

Tamb = 25 °C

IF(AV)

2001)

Repetitive peak forward current

≥ 50 Hz, θ = 180 °,

Tamb = 25 °C

IFRM

6251)

Surge forward current

t < 1 s, Tj = 25 °C

IFSM

Power dissipation

Tamb = 25 °C

Ptot

2001)

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to

ambient air

RthJA

6501)

K/W

Junction temperature

1501)

°C

Storage temperature range

Tstg

- 65 to + 1501)

°C

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 100 mA

1.00

IF = 200 mA

1.25

Leakage current

VR = 100 V

BAV19WS-V

100

VR = 100 V, Tj = 100 °C

BAV19WS-V

µA

VR = 150 V

BAV20WS-V

100

VR = 150 V, Tj = 100 °C

BAV20WS-V

µA

VR = 200 V

BAV21WS-V

100

VR = 200 V, Tj = 100 °C

BAV21WS-V

µA

Dynamic forward resistance

IF = 10 mA

Diode capacitance

VR = 0, f = 1 MHz

1.5

Reverse recovery time

IF = 30 mA, IR = 30 mA,

Irr = 3 mA, RL = 100 Ω

trr

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