MOC3020 THRU MOC3023

OPTOCOUPLERS/OPTOISOLATORS

SOES025 – OCTOBER 1986 – REVISED OCTOBER 1995

7–2

POST OFFICE BOX 655303

electrical characteristics at 25

°C free-air temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

IR

Static reverse current

VR = 3 V

0.05

100

µA

VF

Static forward voltage

IF = 10 mA

1.2

1.5

V

I(DRM)

Repetitive off-state current, either direction

V(DRM) = 400 V,

See Note 5

10

100

nA

dv/dt

Critical rate of rise of off-state voltage

See Figure 1

100

V/

µs

dv/dt(c)

Critical rate of rise of commutating voltage

IO = 15 mA,

See Figure 1

0.15

V/

µs

I

Ii

MOC3020

Ol

l

3 V

15

30

A

IFT

Input trigger current,

MOC3021

Output supply voltage=3V

8

15

mA

IFT

Input trigger current,

either direction

MOC3022

Output supply voltage = 3 V

5

10

mA

MOC3023

3

5

VTM

Peak on-state voltage, either direction

ITM = 100 mA

1.4

3

V

IH

Holding current, either direction

100

µA

NOTE 5: Test voltage must be applied at a rate no higher than 12 V/

µs.

PARAMETER MEASUREMENT INFORMATION

NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input at 0 V. The frequency of Vin is increased until the

phototriac turns on. This frequency is then used to calculate the dv/dt according to the formula:

The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-V pulses to the input and increasing

the frequency of Vin until the phototriac stays on (latches) after the input pulse has ceased. With no further input pulses, the

frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then be used

to calculate the dv/dt(c) according to the formula shown above.

dv dt

+ 22πfV

in

6

4

RL

1

2

2N3904

10 k

Ω

VCC

VI = 30 V rms

Input

(see Note A)

Figure 1. Critical Rate of Rise Test Circuit