BD745 datasheet(2/3 Pages) ISC

2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD745/A/B/C

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD745

BD745A

BD745B

V(BR)CEO

Collector-emitter

breakdown voltage

BD745C

IC=30mA; IB=0

100

VCEsat-1

Collector-emitter saturation voltage

IC=5 A;IB=0.5 A

1.0

VCEsat-2

Collector-emitter saturation voltage

IC=20 A;IB=5 A

3.0

VBE -1

Base-emitter on voltage

IC=5A ; VCE=4V

1.0

VBE -2

Base-emitter on voltage

IC=20A ; VCE=4V

3.0

BD745/A

VCE=30V; IB=0

ICEO

Collector cut-off current

BD745B/C

VCE=60V; IB=0

0.1

BD745

VCE=50V; VBE=0

TC=125℃

0.1

5.0

BD745A

VCE=70V; VBE=0

TC=125℃

0.1

5.0

BD745B

VCE=90V; VBE=0

TC=125℃

0.1

5.0

ICBO

Collector cut-off current

BD745C

VCE=110V; VBE=0

TC=125℃

0.1

5.0

IEBO

Emitter cut-off current

VEB=5V; IC=0

0.5

hFE-1

DC current gain

IC=1A ; VCE=4V

hFE-2

DC current gain

IC=5A ; VCE=4V

150

hFE-3

DC current gain

IC=20A ; VCE=4V

Switching times resistive load

Delay time

0.02

μs

Rise time

0.35

μs

Storage time

0.5

μs

Fall time

IC=5 A;IB1=-IB2=0.5 A

VBE(off)=-4.2V; RL=6Ω

tp=20μs

0.4

μs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance junction to case

1.1

℃/W

BD745 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

BD745 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2 3

Datasheet Descarga

Enlace URL