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2SD1940 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD1940
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  4 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1940 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD1940 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD1940 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SD1940 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SD1940 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SD1940
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;RBE=∞
85
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA ;IE=0
100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=5mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.4A
2.0
V
VBE
Base-emitter on voltage
IC=1A;VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
60
320
hFE-2
DC current gain
IC=3A ; VCE=5V
20
fT
Transition frequency
IC=1A ; VCE=5V
15
MHz
COB
Collector output capacitance
f=1MHz;VCB=10V
110
pF
Switching times
ton
Turn-on time
0.28
μs
ts
Storage time
3.60
μs
tf
Fall time
IC=0.5A; IB1=-IB2=50mA
VCC=20V ,RL=40Ω
0.50
μs
hFE-1 Classifications
D
E
F
60-120
100-200
160-320



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