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2SD1715 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1715 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1715 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=7A ;IB=0.7A 2.0 V VBE Base-emitter on voltage IC=7A ; VCE=5V 1.8 V ICBO Collector cut-off current VCB=150V; IE=0 50 μA IEBO Emitter cut-off current VEB=3V; IC=0 50 μA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE -2 DC current gain IC=1A ; VCE=5V 60 200 hFE -3 DC current gain IC=7A ; VCE=5V 20 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 140 pF fT Transition frequency IC=0.5A ; VCE=5V 20 MHz hFE-2 classifications Q S P 60-120 80-60 100-200 |
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