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2SC4130 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4130 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4130 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A 0.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.3 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE DC current gain IC=3A ; VCE=4V 10 30 COB Output capacitance IE=0; VCB=10V;f=1MHz 50 pF fT Transition frequency IE=-0.5A ; VCE=12V 15 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 2.2 μs tf Fall time IC=3A; IB1=0.3A IB2=-0.6A VCC=200V ,RL=67Ω 0.5 μs |
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