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2SC4107 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SC4107
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  4 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC4107 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC4107 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC4107 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC4107 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SC4107 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SC4107
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; RBE=∞
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.2A
0.8
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=400V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1.2A ; VCE=5V
15
50
hFE-2
DC current gain
IC=6A ; VCE=5V
10
hFE-3
DC current gain
IC=10mA ; VCE=5V
10
fT
Transition frequency
IC=1.2A ; VCE=10V
20
MHz
COB
Collector output capacitance
f=1MHz ; VCB=10V
120
pF
Switching times
ton
Turn-on time
0.5
μs
tstg
Storage time
2.5
μs
tf
Fall time
IC=7A;IB1=1.4A;
IB2=-2.8A;RL=28.6Ω
VCC=200V
0.3
μs
hFE-1 classifications
L
M
N
15-30
20-40
30-50



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