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2SC2023 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2023 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2023 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 300 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V ICBO Collector cut-off current VCB=300V ;IE=0 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=0.5 A ; VCE=4V 30 fT Transition frequency IC=0.2A ; VCE=12V 10 MHz Cob Collector output capacitance f=1MHz ; VCB=10V 75 pF Switching times ton Turn-on time 0.30 μs ts Storage time 4.00 μs tf Fall time IC=1A, IB1=0.1A IB2=-0.2A; VCC=100V RL=100Ω 1.00 μs |
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