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2N6306 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6306 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6306 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 8 A IB Base current 4 A PT Total power dissipation Tc=25℃ 125 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ Fig.1 simplified outline (TO-3) and symbol |
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