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2N5108 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2N5108
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5108 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon NPN Power Transistor
2N5108
DESCRIPTION
·High Current-Gain Bandwidth Product
: fT= 1200MHz (Min) @VCE = 10V,IE = 50mA
·Low Saturation Voltage
·Good Linearity of hFE
APPLICATIONS
·Designed for general purpose Class C amplifier applications
up to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
55
V
VCEO
Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
0.4
A
Collector Power Dissipation
@TC=25℃
3.5
PC
Collector Power Dissipation
@Ta=25℃
1.0
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175
℃


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