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MJ802 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ802 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=0.2A ;IB=0 90 V VCE(sat) Collector-Emitter Saturation Voltage IC=7.5A; IB=0.75A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC=7.5A; IB=0.75A 1.3 V VBE(on) Base-Emitter On Voltage IC=7.5A ; VCE=2V 1.3 V ICBO Collector Cutoff Current VCB=100V; IE=0 VCB=100V; IE=0;TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff current VEB=4V; IC=0 1.0 mA hFE DC Current Gain IC=7.5A ; VCE=2V 25 100 fT Current-Gain—Bandwidth Product IC=1A;VCE=10V;f=1.0MHz 2.0 MHz isc Website:www.iscsemi.cn |
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