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BUX39 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza BUX39
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUX39 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUX39 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUX39 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUX39
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A; IB= 0; L =25mH
90
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 12A; IB= 1.2A
1.2
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 20A ;IB= 2.5A
1.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 20A ;IB= 2.5A
2.5
V
ICEO
Collector Cutoff Current
VCE= 70V; IB= 0
B
1.0
mA
ICEX
Collector Cutoff Current
VCE= 120V;VBE= -1.5V
VCE= 120V;VBE= -1.5V;TC=125℃
1.0
5.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 12A ; VCE= 4V
15
45
hFE-2
DC Current Gain
IC= 20A ; VCE= 4V
8
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 15V
8
MHz
Switching Times
ton
Turn-on Time
IC= 20A ;IB1= 2.5A; VCC= 30V
1.5
μs
ts
Storage Time
1.0
μs
tf
Fall Time
IC= 20A ;IB1= -IB2= 2.5A;
VCC= 30V
0.3
μs
isc Website：www.iscsemi.cn



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