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BUT11AF Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUT11AF Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.3 V ICES Collector Cutoff Current VCE= 1000V ;VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 mA hFE-1 DC Current Gain IC= 5mA ; VCE= 5V 10 35 hFE-2 DC Current Gain IC= 0.5A ; VCE= 5V 10 35 Switching Times; Resistive Load ton Turn-on Time 1.0 μs ts Storage Time 4.0 μs tf Fall Time IC= 2.5A; IB1= -IB2= 0.5A VCC= 250V;RL= 100Ω 0.8 μs isc Website:www.iscsemi.cn |
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