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BU941 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU941 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU941 DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IB B Base Current 1 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @TC=25℃ 180 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.97 ℃/W isc Website：www.iscsemi.cn |
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