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TCST1000 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TCST1000 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page ![]() TCST1000/ TCST2000 Vishay Telefunken www.vishay.com 2 (8) Rev. A3, 08–Jun–99 Document Number 83762 Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp ≤ 10 ms IFSM 3 A Power dissipation Tamb ≤ 25°C PV 100 mW Junction temperature Tj 100 °C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V Collector current IC 100 mA Collector peak current tp /T = 0.5, tp ≤ 10 ms ICM 200 mA Power dissipation Tamb ≤ 25°C PV 150 mW Junction temperature Tj 100 °C Coupler Parameter Test Conditions Symbol Value Unit Total power dissipation Tamb ≤ 25°C Ptot 250 mW Ambient temperature range Tamb –55 to +85 °C Storage temperature range Tstg –55 to +100 °C Soldering temperature 2 mm from case, t ≤ 5 s Tsd 260 °C Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 60 mA VF 1.25 1.5 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 10 mA VECO 7 V Collector dark current VCE = 25 V, IF = 0, E = 0 ICEO 100 nA Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector current VCE = 5 V, IF = 20 mA IC 0.25 0.5 mA Collector emitter saturation voltage IF = 20 mA, IC = 25 mA VCEsat 0.4 V Resolution, path of the shutter crossing the radiant sensitive zone ICrel = 10/90% 0.6 mm |
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