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BUT131 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BUT131
Descripción Electrónicos  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUT131 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUT131/A
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)- BUT131
500V(Min)- BUT131A
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUT131
850
VCES
Collector-Emitter Voltage
VBE= 0
BUT131A
1000
V
BUT131
450
VCEO
Collector-Emitter Voltage
BUT131A
500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
B
Base Current-Continuous
4
A
IBM
Base Current-Peak
8
A
PC
Collector Power Dissipation
@ TC=25℃
80
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.56
℃/W
isc Website：www.iscsemi.cn


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