BZX85C datasheet(1/5 Pages) VISHAY

No. de pieza	BZX85C

Descripción Electrónicos	Silicon Epitaxial Planar Z-Diodes

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VISHAY [Vishay Siliconix]

Página de inicio	http://www.vishay.com

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BZX85C...

Vishay Telefunken

Rev. 3, 01-Apr-99

1 (5)

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 85608

Silicon Epitaxial Planar Z–Diodes

Features

D Sharp edge in reverse characteristics

D Low reverse current

D Low noise

D Very high stability

D Available with tighter tolerances

Applications

Voltage stabilization

94 9369

Absolute Maximum Ratings

Tj = 25_C

Parameter

Test Conditions

Type

Symbol

Value

Unit

Power dissipation

l=4mm, TL=25°C

PV

1.3

W

Junction temperature

Tj

175

°C

Storage temperature range

Tstg

–65...+175

°C

Maximum Thermal Resistance

Tj = 25_C

Parameter

Test Conditions

Symbol

Value

Unit

Junction ambient

l=4mm, TL=constant

RthJA

110

K/W

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

IF=200mA

VF

1

V

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