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BUW131 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BUW131
Descripción Electrónicos  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUW131 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUW131/A
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V (Min)-BUW131
500V (Min)-BUW131A
APPLICATIONS
·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
BUW131
850
VCES
Collector- Emitter
Voltage(VBE= 0)
BUW131A
1000
V
BUW131
450
VCEO
Collector-Emitter
Voltage
BUW131A
500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
B
Base Current
6
A
IBM
Base Current-Peak
12
A
PC
Collector Power Dissipation
@TC=25℃
125
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0
℃/W
isc Website：www.iscsemi.cn


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