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SGSF313 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza SGSF313
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

SGSF313 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
SGSF313
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
:
VCEO(SUS)= 450V(Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed to be used as switch in high efficency off-line
(220V mains)
switching power supplies for consumer
applications like sets VCR’s and monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEX
Collector-Emitter Voltage(VBE= -2.5V)
1000
V
VCES
Collector-Emitter Voltage(VBE=0)
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
B
Base Current
3
A
IBM
Base Current-Peak
6
A
PD
Total Power Dissipation@TC=25℃
70
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Rresistance,Junction to Case
1.78
℃/W
isc Website：www.iscsemi.cn


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