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BD950F Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza BD950F
Descripción Electrónicos  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD950F Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD950F/952F/954F/956F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BD950F
-60
BD952F
-80
BD954F
-100
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD956F
IC= -100mA ; IB= 0
-120
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
B
-1.0
V
VBE(on)
Base-Emitter On Voltage
IC= -2A; VCE= -4V
-1.4
V
ICBO
Collector Cutoff Current
VCB= VCBOmax; IE= 0
VCB=
1/
2VCBOmax; IE= 0,TJ=150℃
-0.05
-1
mA
ICEO
Collector Cutoff Current
VCE=
1/
2VCEOmax; IB= 0
-0.1
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-0.2
mA
hFE-1
DC Current Gain
IC= -500mA ; VCE= -4V
40
hFE-2
DC Current Gain
IC= -2A ; VCE= -4V
20
fT
Current-Gain—Bandwidth Product
IC= -500mA ; VCE= -4V
3
MHz
Switching Times
ton
Turn-On Time
0.3
μs
toff
Turn-Off Time
IC= -1.0A; IB1= -IB2= -0.1A
1.5
μs
isc Website：www.iscsemi.cn
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