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MJ1000 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza MJ1000
Descripción Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ1000 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
MJ1000
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 3A
·Low Collector Saturation Voltage-
: VCE (sat)= 2.0V(Max.)@ IC= 3A
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continunous
10
A
IB
B
Base Current-Continunous
0.1
A
PC
Collector Power Dissipation
@TC=25℃
90
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-55~+200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.94
℃/W
isc Website：www.iscsemi.cn


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