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BU941ZP Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza BU941ZP
Descripción Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU941ZP Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BU941ZP Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU941ZP Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJW16010A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCL
Clamping Voltage
IC= 100mA
350
500
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 8A; IB= 0.1A
B
1.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 0.25A
1.8
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 12A; IB= 0.3A
2.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 8A; IB= 0.1A
B
2.2
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 10A; IB= 0.25A
2.5
V
VBE(sat)-3
Base-Emitter Saturation Voltage
IC= 12A; IB= 0.3A
2.7
V
ICEO
Collector Cutoff Current
VCE= 300V; IB= 0
VCE= 300V; IB= 0;TC=125℃
0.1
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
20
mA
hFE
DC Current Gain
IC= 5A ; VCE= 10V
300
VECF
C-E Diode Forward Voltage
IF= 10A
2.5
V
Switching times;Inductive load
tstg
Storage Time
15
μs
tf
Fall Time
IC= 7A; IB= 70mA, R
B
BE= 47Ω;
Vclamp= 300V, VBE= 0; L= 7mH
0.5
μs
isc Website：www.iscsemi.cn
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