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2SA1250 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1250 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1250 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=200V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -10 μA hFE-1 DC current gain IC=-2A ; VCE=-1V 40 200 hFE-2 DC current gain IC=-5A ; VCE=-1V 20 2 |
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