2SD1621 datasheet(1/2 Pages) KEXIN

No. de pieza	2SD1621

Descripción Electrónicos	NPN Epitaxial Planar Silicon Transistor

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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NPN Epitaxial Planar Silicon Transistor

2SD1621

Features

Adoption of FBET, MBIT processes.

Low collector-to-emitter saturation voltage.

Large current capacity and wide ASO.

Fast switching speed.

Very small size making it easy to provide highdensity,

small-sized hybrid IC’

s.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

30

V

Collector-emitter voltage

VCEO

25

V

Emitter-base voltage

VEBO

6V

Collector current

IC

2A

Collector current (pulse)

ICP

5A

PC

500

mW

PC*

1.3

W

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

* Mounted on ceramic board(250mm2X0.8mm)

Collector dissipation

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2SD1621 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

2SD1621 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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