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2SC4446 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC4446 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 40V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 10V, IC=0 0.1 ìA DC current gain hFE VCE =6V , IC = 1mA 135 600 Gain bandwidth product fT VCE =6V , IC = 1mA 130 MHz Collector-to-emitter saturation voltage VCE(sat) IC = 50mA , IB = 5mA 0.15 0.5 V Base-to-emitter saturation voltage VBE(sat) IC = 50mA , IB = 5mA 0.85 1.2 V Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE =0 60 V Collector-to-emitter breakdown voltage V(BR)CEO IC =1mA , RBE = 50 V Emitter-to-base breakdown voltage V(BR)EBO IE = 10ìA , IC =0 15 V Output capacitance Cob VCB = 6V, f = 1MHz 2.2 pF Turn-on time ton 50 ns Storage time tstg 590 ns Fall time tf 110 ns 2SC4446 hFE Classification Marking Rank 5 6 7 hFE 135 270 200 400 300 600 H |
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