TIP34C datasheet(2/4 Pages) STMICROELECTRONICS

No. de pieza	TIP34C

Descripción Electrónicos	COMPLEMENTARY SILICON POWER TRANSISTORS

PDF	4 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.56

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 140 V

400

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 60 V

0.7

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 30 mA

100

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 3 A

IB = 0.3 A

IC = 10 A

IB = 2.5 A

VBE(on)

∗ Base-Emitter Voltage

IC = 3 A

VCE = 4 V

IC = 10 A

VCE = 4 V

1.6

hFE

∗

DC Current Gain

IC = 1 A

VCE = 4 V

IC = 3 A

VCE = 4 V

100

hfe

Small Signal Current

Gain

IC = 0.5 A

VCE = 10 V

f = 1 KHz

Transition frequency

IC = 0.5 A

VCE = 10 V

f = 1 MHz

MHz

ton

RESISTIVE LOAD

Turn-on Time

Storage Time

Fall Time

VCC = 30V

IC = 6 A

VBB = - 6 V

IB1 = - IB2 = 0.6 A

tp = 20

µs

0.6

0.4

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

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