MBRF30H150CT datasheet(2/5 Pages) VISHAY

2 / 5 page

MBR30H150CT, MBRF30H150CT & SB30H150CT-1

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88865

Revision: 18-Apr-08

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Maximum instantaneous forward

voltage per diode (1)

IF = 15 A

IF = 30 A

TC = 25 °C

TC = 125 °C

TC = 25 °C

TC = 125 °C

0.90

0.75

0.99

0.86

Maximum reverse current per diode

at working peak reverse voltage (1)

TJ = 25 °C

TJ = 125 °C

5.0

1.0

µA

THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR

MBRF

MBRB

UNIT

Typical thermal resistance per diode

RθJC

1.7

4.0

1.7

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

MBR30H150CT-E3/45

2.06

50/tube

Tube

ITO-220AB

MBRF30H150CT-E3/45

2.20

50/tube

Tube

TO-262AA

SB30H150CT-1E3/45

1.58

50/tube

Tube

Figure 1. Forward Derating Curve (Total)

100

125

150

175

MBRF

MBR, MBRB

Case Temperature (°C)

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

280

240

200

160

120

100

Number of Cycles at 60 Hz

J = TJ Max.

8.3 ms Single Half Sine-Wave

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