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PCP1202 Datasheet(PDF) 2 Page - Sanyo Semicon Device

No. de pieza PCP1202
Descripción Electrónicos  NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
PDF  4 Pages
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

PCP1202 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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PCP1202
No. A1165-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=80V, IE=0A
1
μA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
1
μA
DC Current Gain
hFE
VCE=5V, IC=100mA
200
560
Gain-Bandwidth Product
fT
VCE=10V, IC=300mA
140
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
12
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=1A, IB=100mA
110
165
mV
VCE(sat)2
IC=0.5A, IB=50mA
65
100
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=100mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10μA, IE=0A
180
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100μA, RBE=0Ω
180
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
150
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10μA, IC=0A
7
V
Turn-ON Time
ton
See specified Test Circuit.
50
ns
Storage Time
tstg
See specified Test Circuit.
1460
ns
Fall Time
tf
See specified Test Circuit.
70
ns
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7008A-003
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
Top View
Bottom View
0.75
VR
RB
VCC=75V
IC=10IB1= --10IB2=0.5A
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
μF470μF
PW=20
μs
IB1
D.C.
≤1%
IB2
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
5mA
2.0
1.5
1.0
0.5
0
0
0.2
0.4
0.5
0.1
0.3
IB=0mA
IT13542
2.0
1.5
1.0
0.5
0
02
5
13
4
1mA
20mA
40mA
60mA
80mA
2mA
IB=0mA
IT13543
10mA
5mA
120mA
10mA
20mA
40mA
60mA
100mA
100mA
120mA
200mA
80mA



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