T820-xxxW / T830-xxxW

2/5

µs)

µs

GATE CHARACTERISTICS (maximum values)

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient

50

°C/W

Rth(j-c)

Junction to case for A.C (360° conduction angle)

3.1

°C/W

THERMAL RESISTANCES

Symbol

Test Conditions

Quadrant

T820

T830

Unit

Ω

Tj= 25°C

I-II-III

MAX

20

30

mA

Ω

Tj= 25

°C

I-II-III

MAX

1.5

V

Ω

Tj= 125°C

I-II-III

MIN

0.2

V

tgt

µs

Tj= 25°C

I-II-III

TYP

2

µs

Gate open

Tj= 25

°C

MAX

35

50

µs

Tj= 25

°C

MAX

1.5

V

VDRM rated

Tj= 25

°C

MAX

10

µA

Tj= 125°C

MAX

2

mA

dV/dt *

Linear slope up to

Gate open

Tj= 125

°C

MIN

200

300

V/

µs

(dV/dt)c *

(dI/dt)c = 4.5 A/ms (see note)

Tj= 125

°C

MIN

10

20

V/

µs

* For either polarity of electrode A2 voltage with reference to electrode A1.

Note : In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/

µs, and, therefore, it is unnecessary to use

a snuber R-C network accross T820W / T830W triacs.

ELECTRICAL CHARACTERISTICS