Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

Preview PDF HTML

HAT2210R Datasheet(PDF) 4 Page - Renesas Technology Corp

No. de pieza HAT2210R
Descripción Electrónicos  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2210R Datasheet(HTML) 4 Page - Renesas Technology Corp

  HAT2210R Datasheet HTML 1Page - Renesas Technology Corp HAT2210R Datasheet HTML 2Page - Renesas Technology Corp HAT2210R Datasheet HTML 3Page - Renesas Technology Corp HAT2210R Datasheet HTML 4Page - Renesas Technology Corp HAT2210R Datasheet HTML 5Page - Renesas Technology Corp HAT2210R Datasheet HTML 6Page - Renesas Technology Corp HAT2210R Datasheet HTML 7Page - Renesas Technology Corp HAT2210R Datasheet HTML 8Page - Renesas Technology Corp HAT2210R Datasheet HTML 9Page - Renesas Technology Corp Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 12 page
background image
HAT2210R, HAT2210RJ
Rev.3.00, Mar.15.2005, page 4 of 11
Main Characteristics
• MOS1
4.0
3.0
2.0
1.0
0
50
100
150
200
100
10
1
110
100
20
10
05
10
20
10
0
24
68
10
0.1
1000
VGS = 2.8 V
Tc = 75
°C
25
°C
−25°C
Ambient Temperature
Ta (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage VDS
(V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS
(V)
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
3.6 V
3.2 V
4.5 V
10 V
0.1
0.01
100
µs
1 ms
PW
=
10
ms
(1shot)
Ta = 25
°C
1 shot Pulse
10
µs
Note
5
DC
Opera
tion
(PW
≤ 10
s)
Operation in
this area is
limited by RDS(on)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
200
150
100
50
0
48
12
16
20
0.1
1
10
10
1
ID = 5 A
2 A
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
Pulse Test
1 A
100
100
VGS = 4.5 V
10 V



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com