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HTT1129E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HTT1129E Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 9 page ![]() HTT1129E Rev.2.00 Aug 10, 2005 page 2 of 8 Absolute Maximum Ratings (Ta = 25 °C) Ratings Item Symbol Q1 Q2 Unit Collector to base voltage VCBO 15 15 V Collector to emitter voltage VCEO 6 6 V Emitter to base voltage VEBO 1.5 0.8 V Collector current IC 80 50 mA Collector power dissipation PC Total 200* mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –50 to +150 °C Note: *Value on PCB. (FR–4 (13 x 13 x 0.635 mm)). 0 50 100 150 200 Collector Power Dissipation Curve Ambient temperature Ta ( °C) 250 200 150 100 50 *Value on PCB. (FR–4 (13 x13 x 0.635 mm)) 2 devices total |
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