2SC5945 datasheet(2/36 Pages) RENESAS

No. de pieza	2SC5945

Descripción Electrónicos	Si NPN Epitaxial High Frequency Medium Power Amplifier

PDF	36 Pages

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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2 / 36 page

2SC5945

Rev.3.00 Aug 03, 2006 page 2 of 35

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

DC current transfer ratio

hFE

110

150

190



VCE = 3 V, IC = 100 mA

Reverse Transfer Capacitance

Cre



1.0



VCB = 2 V, IE = 0, f = 1 MHz,

emitter grounded

Transition Frequency



15.5



GHz

VCE = 3 V, IC = 100 mA,

f = 1 GHz

Maximum Available Gain

MAG



VCE = 3 V, IC = 100 mA,

f = 2.4 GHz

Power Gain



Power Added Efficiency

PAE



VCE = 3.3 V, ICq = 100 mA,

f = 2.4 GHz, Pin= +20 dBm

1dB Compression Point at output

P1dB



+24



dBm

VCE = 3.3 V, ICq = 100 mA,

f = 2.4 GHz

1dB Compression Point at output

P1dB



+26



dBm

VCE = 3.3 V, ICq = 250 mA,

f = 2.4 GHz

Main Characteristics

500

400

300

200

100

IB = 0.5 mA

100

150

200

1.5

1.0

0.5

1.5 mA

2.5 mA

3.5 mA

1.0 mA

2.0 mA

3.0 mA

4.0 mA

Collector to Emitter Voltage VCE (V)

Typical Output Characteristics

Collector Power Dissipation Curve

Ambient Temperature Ta (°C)

*(40 x 40 x 1 mm)

Value on PCB

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