2SC1472 datasheet(4/6 Pages) RENESAS

No. de pieza	2SC1472

Descripción Electrónicos	Silicon NPN Epitaxial, Darlington

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrónico	RENESAS [Renesas Technology Corp]

Página de inicio	http://www.renesas.com

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4 / 6 page

2SC1472(K)

Rev.2.00 Aug 10, 2005 page 4 of 5

Base Current IB (mA)

2.4

2.0

1.6

1.2

0.8

0.4

1100

300

1,000

Collector to Emitter Saturation

Voltage vs. Base Current

Pulse

Ta = 25

°C

IC = 500 mA

20 50 100 200

Collector Current IC (mA)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1100

200

210

550

500

Base to Emitter Saturation

Voltage vs. Collector Current

Pulse

IC = 1,000 IB

Ta = –50°

–25

100

Collector to Base Voltage VCB (V)

Emitter to Base Voltage VEB (V)

0.1

1.0

0.3

Input and Output Capacitance vs. Voltage

f = 1 MHz

Cob(IE = 0)

Cib(IC = 0)

Base Current IC (mA)

1.0

0.3

0.1

0.03

0.3

100

1.0

300

Switching Time vs. Collector Current

toff

tstg

ton

IC = 100 IB1 = –100 IB2

VCC = 10.5 V

Switching Time Test Circuit

0.002

–6 V

10.5 V

D.U.T.

CRT

P.G.

tr, tf

≤ 15 ns

PW ³ 10

µs

duty ratio

≤ 10%

–

0.002

–

Unit R :

Ω

C :

µF

13 V

10%

Response Waveform

90%

ton

toff

tstg

Input

Output

90%

10%

90%

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