2SC1214 datasheet(2/5 Pages) RENESAS

No. de pieza	2SC1214

Descripción Electrónicos	Silicon NPN Epitaxial

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	RENESAS [Renesas Technology Corp]

Página de inicio	http://www.renesas.com

Logo

2 / 5 page

2SC1214

Rev.2.00 Aug 10, 2005 page 2 of 4

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

—

IC = 10

µA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

—

IC = 1 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

—

IE = 10

µA, IC = 0

Collector cutoff current

ICBO

—

0.5

µA

VCB = 20 V, IE = 0

DC current transfer ratio

hFE*

—

320

VCE = 3 V, IC = 10 mA

hFE

—

VCE = 3 V, IC = 500 mA

(pulse test)

Collector to emitter saturation voltage

VCE(sat)

—

0.2

0.6

IC = 150 mA, IB = 15 mA

(Pulse test)

Base to emitter voltage

VBE

—

0.64

—

VCE = 3 V, IC = 10 mA

Note:

1. The 2SC1214 is grouped by hFE as follows.

60 to 120

100 to 200

160 to 320

2SC1214 Datasheet(PDF) 2 Page - Renesas Technology Corp

2SC1214 Datasheet(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5

Datasheet Descarga

Enlace URL