2SA1122 datasheet(2/5 Pages) RENESAS

No. de pieza	2SA1122

Descripción Electrónicos	Silicon PNP Epitaxial

PDF	5 Pages

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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2 / 5 page

2SA1122

Rev.2.00 Aug 10, 2005 page 2 of 4

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

–55

—

IC = –10

µA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

–55

—

IC = –1 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

–5

—

IE = –10

µA, IC = 0

Collector cutoff current

ICBO

—

–0.5

µA

VCB = –30 V, IE = 0

Emitter cutoff current

IEBO

—

–0.5

µA

VEB = –2 V, IC = 0

DC current transfer ratio

hFE*

160

—

500

VCE = –12 V, IC = –2 mA

Collector to emitter saturation voltage

VCE(sat)

—

–0.5

IC = –10 mA, IB = –1 mA

Base to emitter voltage

VBE

—

–0.75

VCE = –12 V, IC = –2 mA

Note:

1. The 2SA1122 is grouped by hFE as follows.

Grade

Mark

hFE

160 to 320

250 to 500

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