STPS30H100CW datasheet(3/4 Pages) STMICROELECTRONICS

No. de pieza	STPS30H100CW

Descripción Electrónicos	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

PDF	4 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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1E-3

1E-2

1E-1

1E+0

100

120

140

160

180

200

220

240

t(s)

IM(A)

Tc=25°C

Tc=150°C

Tc=75°C

δ=0.5

Fig. 3: Non repetitive surge peak forward current ver-

sus overload duration (maximum values, per diode).

203040

5060708090

100

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

2E+0

VR(V)

IR(mA)

Tj=125°C

Tj=25°C

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

100

200

VFM(V)

IFM(A)

Tj=25°C

Tj=125°C

Fig. 7: Forward voltage drop versus forward cur-

rent (maximum values, per diode).

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 4: Relative variation of thermal impedance

junction to case versus pulse duration.

100

200

500

1000

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values, per diode).

STPS30H100CW

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