2STW4466 datasheet(3/9 Pages) STMICROELECTRONICS

No. de pieza	2STW4466

Descripción Electrónicos	High power NPN epitaxial planar bipolar transistor

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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2STW4466

Electrical characteristics

3/9

Electrical characteristics

(Tcase = 25°C; unless otherwise specified)

Table 4.

Electrical characteristics

Pulsed duration = 300 µs, duty cycle

≤ 1.5%

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 100 V

0.1

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 6 V

0.1

µA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 1 mA

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = 100 µA

100

V(BR)CEO

Collector-emitter breakdown

voltage (IB = 0)

IC = 50 mA

VCE(sat)

(1) Collector-emitter saturation

voltage

IC = 2

IB = 200 mA

IC = 6 A

IB = 600 mA

0.6

1.5

VBE

(1)

Base-emitter voltage

VCE = 4 V

IC = 6 A

1.5

hFE

DC current gain

IC = 2 A

VCE = 4 V

120

Transition frequency

IC = 0.5 A

VCE = 12 V

MHz

CCBO

Collector-base capacitance

(IE = 0)

VCB = 10 V

f = 1 MHz

ton

tstg

Resistive load

Turn-on time

Storage time

Fall time

IC = 3 A

VCC = 30 V

IB1 = -IB2 = 0.3 A

0.15

1.5

0.1

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