STPS15L25D datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STPS15L25D/G

3/5

1E-3

1E-2

1E-1

1E+0

100

150

200

250

300

350

IM(A)

Tc=25°C

Tc=100°C

Tc=75°C

t(s)

δ=0.5

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

IR(mA)

Tj=125°C

Tj=25°C

Tj=150°C

VR(V)

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

1.0E-4

1.0E-3

1.0E-2

1.0E-1

1.0E+0

0.0

0.2

0.4

0.6

0.8

1.0

t(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

0.1

1.0

5.0

VR(V)

C(nF)

F=1MHz

Tj=25°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

IFM(A)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

1.0

10.0

100.0

200.0

VFM(V)

Tj=25°C

Tj=125°C

Typical values

Tj=150°C

Fig. 9: Forward voltage drop versus forward

current (maximum values).

1216

202428323640

Rth(j-a) (°C/W)

S(Cu) (cm²)

Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, copper thickness : 35 µm).

(STPS15L25G only)

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