STP4N100 datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

td(on)

Turn-on Time

Rise Time

VDD =800 V

ID =2 A

RG =50

Ω

VGS =10 V

(see test circuit, figure 3)

165

(di/dt) on

Turn-on Current Slope

VDD =800 V

ID =4 A

RG =50

Ω

VGS =10 V

(see test circuit, figure 5)

180

µs

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 800 V

ID =4 A

VGS =10 V

100

SWITCHING OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

tr(Voff)

Of f-voltage Rise Time

Fall Time

Cross-over Time

VDD =800 V

ID =4 A

RG =50

Ω

VGS =10 V

(see test circuit, figure 5)

100

155

125

190

SOURCE DRAIN DIODE

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

ISD

I SDM(

•)

Source-drain Current

(pulsed)

VSD (

∗)

Forward On Volt age

ISD =4A

VGS =0

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD =4 A

di/dt = 100 A/

µs

VDD = 100 V

Tj =150

(see test circuit, figure 5)

1200

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Areas For TO-220

Safe Operating Areas For ISOWATT220

STP4N100/FI

3/10

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