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PM6685 Datasheet(PDF) 37 Page - STMicroelectronics

No. de pieza PM6685
Descripción Electrónicos  Dual step-down main supply controller with auxilary voltages for notebook system power
PDF  52 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PM6685 Datasheet(HTML) 37 Page - STMicroelectronics

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PM6685
Monitoring and protections
37/52
As general rule, high side MOSFETs with low gate charge are recommended, in order to
minimize driver losses.
Below there is a list of possible choices for the high side MOSFET.
The power dissipation of the low side MOSFET is given by:
Equation 19
Maximum conduction losses occur at the maximum input voltage:
Equation 20
Choose a synchronous rectifier with low RDSon. When high side MOSFET turns on, the fast
variation of the phase node voltage can bring up even the low side gate through its gate-
drain capacitance CRSS, causing cross-conduction problems. Choose a low side MOSFET
that minimizes the ratio CRSS/CGS (CGS = CISS - CRSS).
Below there is a list of some possible low side MOSFETs.
Dual n-channel MOSFETs can be used in applications with a maximum output current of
about 3 A. Below there is a list of some MOSFET manufacturers.
Table 14.
High side MOSFET manufacturer
Manufacturer
Type
Gate charge (nC)
Rated reverse voltage (V)
ST
STS12NH3LL
10
30
ST
STS17NH3LL
18
30
Table 15.
Low side MOSFET manufacturer
Manufacturer
Type
RDSon (mΩ)
Rated reverse voltage
(V)
ST
STS17NF3LL
5.5
0.047
30
ST
STS25NH3LL
3.5
0.011
30
conduction
DLowSide
P
P
=
2
LOAD
max
IN
OUT
DSon
conduction
(max)
I
V
V
1
R
P
×
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
×
=
GS
RSS
C
C



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