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T1035H6T Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza T1035H6T
Descripción Electrónicos  High temperature 10 A Triacs
PDF  10 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T1035H6T Datasheet(HTML) 4 Page - STMicroelectronics

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Characteristics
T1035H, T1050H
4/10
Figure 3.
RMS on-state current versus
ambient temperature (Epoxy
printed circuit board FR4,
copper thickness = 35 µm)
Figure 4.
Variation of thermal impedance
versus pulse duration
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
25
50
75
100
125
150
I
T(RMS) (A)
α=180 °
D²PAK
S
CU=1 cm²
Tamb(°C)
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Z
th(°C/W)
Z
th(j-a)
Z
th(j-c)
tP(s)
Figure 5.
On-state characteristics (maximum
values)
Figure 6.
Surge peak on-state current versus
number of cycles
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
ITM(A)
T
j=25 °C
T
j=150 °C
T
j max. :
V
t0 = 0.80 V
R
d = 34 mΩ
VTM(V)
0
10
20
30
40
50
60
70
80
90
100
110
1
10
100
1000
I
TSM(A)
Non repetitive
T
j initial=25 °C
Repetitive
T
c=125 °C
One cycle
t=20ms
Number of cycles
Figure 7.
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms and corresponding
value of I2t
Figure 8.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
10
100
1000
10000
0.01
0.10
1.00
10.00
I
TSM(A), I²t (A²s)
Tj initial=25 °C
dI/dt limitation: 50 A/µs
I
TSM
I²t
tP(ms)
0.0
0.5
1.0
1.5
2.0
2.5
-40
-20
0
20
40
60
80
100
120
140
160
I
GT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
I
GT
I
H & IL
Tj(°C)



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