STBV32 datasheet(2/7 Pages) STMICROELECTRONICS

No. de pieza	STBV32

Descripción Electrónicos	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

112

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEV

Collector Cut -of f

Current (VBE =-1.5V)

VCE = 700V

Tj = 125

IEBO

Emitter Cut -off

Current (IC =0)

VEB =9 V

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC =10 mA

L= 25 mH

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =0. 5 A

IB =0. 1 A

IC =1 A

IB =0.25 A

IC =1.5 A

IB =0.5 A

0.5

VBE(s at)

∗ Base-Emitter

Saturation Voltage

IC =0.5 A

IB =0.1 A

IC =1 A

IB =0.25 A

1.0

1.2

hFE

∗

DC Current Gain

IC =0. 5 A

VCE =2 V

IC =1 A

VCE =2 V

RESI STIVE LO AD

Rise Time

St orage Time

Fall Time

IC =1 A

VCC =125 V

IB1 =0.2 A

IB2 =-0.2 A

Tp=25

µs

1.0

4.0

0.7

µs

INDUCTIVE LO AD

St orage Time

IC =1 A

IB1 =0.2 A

VBE = -5V

L= 50 mH

Vcla mp =300 V

0.8

µs

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.

STBV32

2/7

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