SCN2C60 datasheet(1/5 Pages) SEMIWELL

No. de pieza	SCN2C60

Descripción Electrónicos	Sensitive Gate Silicon Controlled Rectifiers

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Fabricante Electrónico	SEMIWELL [SemiWell Semiconductor]

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Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )

Symbol

Parameter

Condition

Ratings

Units

VDRM

Repetitive Peak Off-State Voltage

600

V

IT(AV)

Average On-State Current

Half Sine Wave : TC = 45 °C

1.0

A

IT(RMS)

R.M.S On-State Current

All Conduction Angle

1.5

A

ITSM

Surge On-State Current

1/2 Cycle, 60Hz, Sine Wave

Non-Repetitive

15

A

I2t

I2t for Fusing

t = 8.3ms

0.9

A2s

PGM

Forward Peak Gate Power Dissipation

TA=25°C, Pulse Width ≤ 1.0㎲

2W

PG(AV)

Forward Average Gate Power Dissipation

TA=25°C, t = 8.3ms

0.1

W

IFGM

Forward Peak Gate Current

1

A

VRGM

Reverse Peak Gate Voltage

5.0

V

TJ

Operating Junction Temperature

- 40 ~ 125

°C

TSTG

Storage Temperature

- 40 ~ 150

°C

SCN2C60

Oct, 2002. Rev. 2

Features

◆

Repetitive Peak Off-State Voltage : 600V

◆

R.M.S On-State Current ( IT(RMS)= 1.5 A )

◆

Low On-State Voltage (1.2V(Typ.)@ITM)

General Description

Sensitive triggering SCR is suitable for the application where

gate current limited such as small motor control, gate driver

for large SCR, sensing and detecting circuits.

2. Gate

1. Cathode

Symbol

○

1/5

SemiWell Semiconductor

Sensitive Gate

Silicon Controlled Rectifiers

TO-92

○

3. Anode

Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.

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