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EM740FS16CS-45LL Datasheet(PDF) 8 Page - Emerging Memory & Logic Solutions Inc

No. de pieza EM740FS16CS-45LL
Descripción Electrónicos  64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
PDF  11 Pages
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Fabricante Electrónico  EMLSI [Emerging Memory & Logic Solutions Inc]
Página de inicio  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM740FS16CS-45LL Datasheet(HTML) 8 Page - Emerging Memory & Logic Solutions Inc

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EM611FV16 Series
Low Power, 64Kx16 SRAM
8
merging Memory & Logic Solutions Inc.
merging Memory & Logic Solutions Inc.
tWC
Address
CS
UB ,LB
WE
Data in
Data out
t
CW(2)
tWR(4)
tAW
tBW
tWP(1)
tDW
tDH
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB CONTROLLED)
High-Z
High-Z
Data Valid
tAS(3)
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS and low WE. A write begins when CS goes low and WE
goes low with asserting UB or LB for single byte operation or simultaneously asserting UB and LB for double
byte operation. A write ends at the earliest transition when CS goes high and WE goes high. The tWP is
measured from the beginning of write to the end of write.
2. tCW is measured from the CS going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS
or WE going high.



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