EM610FV16 datasheet(2/11 Pages) EMLSI

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EM610FV16 Series

Low Power, 64Kx16 SRAM

merging Memory & Logic Solutions Inc.

CS2

I/O

I/O10 I/O11

I/O2

I/O3

VSS

I/O12 DNU

I/O4

VCC

I/O13 DNU DNU

I/O5

VSS

I/O

DNU

I/O

DNU

A10

A11

DNU

FEATURES

• Process Technology : 0.18

µm Full CMOS

• Organization : 64K x 16 bit

• Power Supply Voltage : 2.7V ~ 3.6V

• Low Data Retention Voltage : 1.5V(Min.)

• Three state output and TTL Compatible

• Package Type : 48-FPBGA 6.0x7.0

GENERAL DESCRIPTION

The EM610FV16 families are fabricated by EMLSI’s

advanced full CMOS process technology. The families

support industrial temperature range and Chip Scale

Package for user flexibility of system design. The fami-

lies also supports low data retention voltage for battery

back-up operation with low data retention current.

2. Typical values are measured at Vcc=3.3V, T

A =25

oC and not 100% tested.

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

PKG Type

Standby

(ISB1, Typ.)

Operating

(ICC1.Max.)

EM610FV16

Industrial (-40 ~ 85

oC)

2.7V~3.6V

1) /70ns

0.5

µA2)

3 mA

48-FPBGA

Name

Function

Name

Function

CS1,CS 2 Chip select inputs

Vcc

Power Supply

Output Enable input

Vss

Ground

Write Enable input

Upper Byte (I/O9~16)

A0~A15

Address Inputs

Lower Byte (I/O1~8)

I/O1~I/O16 Data Inputs/outputs

DNU

Do Not Use

I/O Circuit

Column Select

Data

Cont

Data

Cont

Pre-charge Circuit

Memory Array

1024 x 1024

A10 A11

A12

A13

A14 A15

CS1

I/O1 ~ I/O8

I/O9 ~ I/O16

VCC

VSS

Control Logic

FUNCTIONAL BLOCK DIAGRAM

1. The parameter is measured with 30pF test load.

PIN DESCRIPTION

48-FPBGA : Top view (ball down)

CS2

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