FXLS8961AF datasheet(12/101 Pages) NXP

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NXP Semiconductors

FXLS8961AF

3-Axis Low-g Accelerometer

10 Electrical characteristics

VDD = 1.8 V to 3.0 V, T = –40 °C to 105 °C, unless otherwise noted.

Typical values represent mean or mean ±1 σ values, depending on the specific parameter.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Supply voltage

—

1.71

3.0

3.6

IDDHPM

Average current draw in High

Performance mode

ODR independent,

T = 25 °C

—

146.9

200

µA

ODR = 3200 Hz,

T = 25 °C

—

146.9

200

ODR = 1600 Hz,

T = 25 °C

—

73.9

100

ODR = 800 Hz,

T = 25 °C

—

37.5

ODR = 400 Hz,

T = 25 °C

—

19.4

ODR = 200 Hz,

T = 25 °C

—

10.4

ODR = 100 Hz,

T = 25 °C

—

5.88

10.5

ODR = 50 Hz,

T = 25 °C

—

3.63

7.5

ODR = 25 Hz,

T = 25 °C

—

2.50

4.8

ODR = 12.5 Hz,

T = 25 °C

—

2.10

3.3

ODR = 6.25 Hz,

T = 25 °C

—

1.74

2.8

ODR = 3.125 Hz,

T = 25 °C

—

1.56

2.4

ODR = 1.563 Hz,

T = 25 °C

—

1.47

2.3

IDDLPM

Average current draw in low-power

mode

ODR = 0.781 Hz,

T = 25 °C

—

1.42

2.2

µA

IDDSTBY

Supply current draw in Standby mode

T = 25 °C

—

1.01

2.0

µA

IDDHIB

Supply current draw in Hibernate

mode

T = 25 °C

—

100

IDDHPM

Average current draw in High

Performance mode

ODR independent

—

200

µA

Table 8. Electrical characteristics

FXLS8961AF

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2.1 — 7 March 2024

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